Single-Stage Amplifiers Simulation for Microwave Applications Using S-Parameters | ||
| Rafidain Journal of Science | ||
| Article 17, Volume 29, Issue 1, Winter 2020, Page 47-60 PDF (1010 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.33899/rjs.2020.166311 | ||
| Authors | ||
| laith Al Taan1; Nawfal Y. Jamil2; Salah I. Saleh2 | ||
| 1Physics dept. College of science, Mosul University | ||
| 2Department of Physics/ College of Science/ University of Mosul | ||
| Abstract | ||
| A single-stage amplifier circuits containing transistor as BJT or FET transistor were designed for the microwave application using S-parameters, and developed as a lumped circuit then converted to its equivalent microstrip distributed circuits on different substrates such as Alumina (er=9.8) and Beryllia (er=6.3). The output results as power gain Gp, noise figure NF, and stability factor K were obtained. These results were compared with other published worked included circuits having the same conditions. The comparison shows that in case of the feedback applied to the circuit the Gp achieved about (~1.5) dB for BJT circuits along (0.6-1) GHz and noise figure increased about double, where for FET circuit the increasing in Gp about (7) dB along (2) GHz, and noise figure was less than BJT circuit. The physical characteristics are discussed with respect to substrate and show that the substrate with high permittivity was helpful to reach the higher operating frequency and good power gain values. | ||
| Keywords | ||
| single stage; amplifier; field effect; bipolar transistor; microstrip; microwave | ||
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